亚洲彩票app下载

OPT OpenIR  > 瞬态光学研究室
In-situ oxidation fabrication of 0D/2D SnO2/SnS2 novel Step-scheme heterojunctions with enhanced photoelectrochemical activity for water splitting
Mu, Jianglong1; Teng, Feng1; Miao, Hui1; Wang, Yishan2; Hu, Xiaoyun1
作者部门瞬态光学研究室
2020-01-31
发表期刊APPLIED SURFACE SCIENCE
ISSN0169-4332;1873-5584
卷号501
产权排序2
摘要

The transfer/separation of interfacial charge carriers relies heavily on the appropriate interfacial contact of heterojunction. In-situ heterojunction will be an effective way for enhancing charge transfer rate since the tight interface, which is conductive to promote the photoelectrochemical or photochemical activity. Herein, 0D/2D SnO2/SnS2 novel Step-scheme (S-scheme) heterojunctions have been successfully constructed by solvothermal method and in-situ oxidation technique through controlling the annealed temperature in N-2/H-2 atmosphere. The SnS2 nanosheets annealed at 400 degrees C (SS-400) reveals the highest photocurrent density (0.33 mA cm(-2)) at 1.23 V vs. RHE under AM 1.5G, that is approximately of 1.9 and 1.2 times than SS-300 (0.17 mA cm(-2)) and SS-500 (0.27 mA cm(-2)), respectively. The SS-400 shows the hydrogen and oxygen evolution of 5.5 and 2.7 mu mol cm(-2) h(-1), and the corresponding faradaic efficiencies are about 89.4% and 87.7%, respectively. The mainly enhanced reason of SS-400 is that appropriate amount of 0D SnO2 nanoparticles generated on the surfaces and edges of 2D SnS2 nanosheets fabricate the in-situ of S-scheme heterojunctions, which are accelerating the recombination of carriers with relatively weaker redox capacity and promoting the separation of carriers with relatively stronger redox capacity. Meantime, the barrier factor, internal electric field, coulomb interaction, and applied bias factors can also promote the recombination of carriers with weak redox capacity (electrons of SnO2 and holes of SnS2). This work will provide a novel thought for designing and constructing the mechanism of S-scheme heterojunctions for photoelectrochemical water splitting.

关键词In-situ oxidation S-scheme mechanism 0D/2D SnO2/SnS2 Photoelectrochemical water splitting
DOI10.1016/j.apsusc.2019.143974
收录类别SCI
语种英语
WOS记录号WOS:000504658100038
出版者ELSEVIER
引用统计
文献类型期刊亚洲彩票app下载
条目标识符/handle/181661/67922
专题瞬态光学研究室
通讯作者Hu, Xiaoyun
作者单位1.Northwest Univ, Sch Phys, Xian 710069, Shaanxi, Peoples R China
2.Chinese Acad Sci, State Key Lab Transient Opt & Photon, Xian 710119, Shaanxi, Peoples R China
推荐引用方式
GB/T 7714
Mu, Jianglong,Teng, Feng,Miao, Hui,et al. In-situ oxidation fabrication of 0D/2D SnO2/SnS2 novel Step-scheme heterojunctions with enhanced photoelectrochemical activity for water splitting[J]. APPLIED SURFACE SCIENCE,2020,501.
APA Mu, Jianglong,Teng, Feng,Miao, Hui,Wang, Yishan,&Hu, Xiaoyun.(2020).In-situ oxidation fabrication of 0D/2D SnO2/SnS2 novel Step-scheme heterojunctions with enhanced photoelectrochemical activity for water splitting.APPLIED SURFACE SCIENCE,501.
MLA Mu, Jianglong,et al."In-situ oxidation fabrication of 0D/2D SnO2/SnS2 novel Step-scheme heterojunctions with enhanced photoelectrochemical activity for water splitting".APPLIED SURFACE SCIENCE 501(2020).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
In-situ oxidation fa(13731KB)期刊亚洲彩票app下载出版稿限制开放CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Mu, Jianglong]的文章
[Teng, Feng]的文章
[Miao, Hui]的文章
百度学术
百度学术中相似的文章
[Mu, Jianglong]的文章
[Teng, Feng]的文章
[Miao, Hui]的文章
必应学术
必应学术中相似的文章
[Mu, Jianglong]的文章
[Teng, Feng]的文章
[Miao, Hui]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。